Photoelastic coupling in gallium arsenide optomechanical disk resonators
نویسندگان
چکیده
منابع مشابه
Photoelastic coupling in gallium arsenide optomechanical disk resonators.
We analyze the magnitude of the radiation pressure and electrostrictive stresses exerted by light confined inside GaAs semiconductor WGM optomechanical disk resonators, through analytical and numerical means, and find the electrostrictive stress to be of prime importance. We investigate the geometric and photoelastic optomechanical coupling resulting respectively from the deformation of the dis...
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Whispering gallery modes in GaAs disk resonators reach half a million of optical quality factor. These high Qs remain still well below the ultimate design limit set by bending losses. Here we investigate the origin of residual optical dissipation in these devices. A Transmission Electron Microscope analysis is combined with an improved Volume Current Method to precisely quantify optical scatter...
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J. R. Johansson,1,* G. Johansson,2 and Franco Nori3,4 1iTHES Research Group, RIKEN, Wako-shi, Saitama 351-0198, Japan 2Microtechnology and Nanoscience, MC2, Chalmers University of Technology, SE-412 96 Göteborg, Sweden 3CEMS, RIKEN, Wako-shi, Saitama 351-0198, Japan 4Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040, USA (Received 4 April 2014; published 18 November ...
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This thesis work focuses on the design, fabrication and measurement of Gallium Arsenide (GaAs) nano-optomechanical disk resonators. These disks are both GHz frequency mechanical resonators, and high Q (> 10) optical whispering gallery mode resonators. By confining optical and mechanical energy on a sub-μm volume, they enable extremely large optomechanical coupling strengths (g0 >1 MHz). We pres...
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The readout of detector arrays requires the monolithic or hybrid integration of a integrate circuit multiplexer with the detector array. In most LWIR and VLWIR applications, a hybrid approach is used. For example, the detector array may be built from HgCdTe and the readout integrated circuit may be silicon CMOS [1]. The two integrated circuits are mated through a bump-bonding process in which e...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2014
ISSN: 1094-4087
DOI: 10.1364/oe.22.014072